Title
IDDQ Characterization in Submicron CMOS
Abstract
The effectiveness of IDDQ testing requires appropriate discriminability of defective and non-defective quiescent currents. Consequently, the interest in characterizing these currents is growing. In this paper we focus our attention on the non-defective IDDQ current characterization. The dependence of IDDQ on the channel length spread in scaled down devices is examined. The IDDQ distribution of a subthreshold current dominant technology is obtained. Finally, IDDQ test limits depending on acceptable yield loss and standard deviation of the channel length are determined
Year
DOI
Venue
1997
10.1109/TEST.1997.639606
Washington, DC
Keywords
Field
DocType
submicron cmos,channel length spread,defective andnon-defective quiescent current,iddq testing requiresappropriate discriminability,non-defectiveiddq current characterization,channel length,dependence ofiddq,inthis paper,iddq characterization,iddq distribution,iddq test,acceptable yieldloss,standard deviation,manufacturing,cmos technology,statistical analysis,cmos integrated circuits
Computer science,Communication channel,CMOS,Electronic engineering,Subthreshold conduction,Electrical engineering,Standard deviation,Statistical analysis
Conference
ISSN
ISBN
Citations 
1089-3539
0-7803-4209-7
17
PageRank 
References 
Authors
3.63
13
2
Name
Order
Citations
PageRank
Antoni Ferré1183.98
Joan Figueras249056.61