Name
Abstract | ||
|---|---|---|
High-power semiconductor switches can be realised by connecting existing devices in series and parallel. The number of devices in series depends on the operating voltage of an application and the individual device voltage rating. For a given application, the use of higher voltage rated IGBTs leads to a fewer number of devices and vice versa. The total power loss of the series string equals to the sum of individual IGBT power losses and total loss increases with the increase in operating frequency. The level of increase in power loss depends on the device characteristics. For high current operation, the minimum number of devices depends on the current rating of individual device. In this paper, series IGBT string of six 1.2kV, four 1.7kV, two 3.3kV and a single 6.5kV IGBTs are simulated for a 4.5kV/100A application and power losses are analysed for different frequencies and duty cycles. This power loss analysis is extended for commercial IGBTs to compare the simulation results. The number of devices for minimum power loss depends on operating frequencies and power savings are significant both at low and high frequencies. In addition to the power losses, the other important issues in optimising the number of IGBTs are described in this paper. When IGBT modules are connected in parallel the principle of derating is applied to obtained reliable operation. This is explained with some examples. |
Year | DOI | Venue |
|---|---|---|
2008 | 10.1016/j.mejo.2007.11.016 | Microelectronics Journal |
Keywords | Field | DocType |
commercial igbts,power loss analysis,series-parallel string,power loss,minimum power loss,fewer number,power saving,igbt device,minimum number,total power loss,individual igbt power loss,total loss increase,series parallel,igbt,duty cycle,derating,high frequency | Derating,Safe operating area,Power semiconductor device,Voltage,Insulated-gate bipolar transistor,Electronic engineering,Power electronics,Series and parallel circuits,Engineering,Versa,Electrical engineering | Journal |
Volume | Issue | ISSN |
39 | 6 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Noel Y. A. Shammas | 1 | 0 | 0.34 |
| Ruchira Withanage | 2 | 0 | 0.34 |
| Dinesh Chamund | 3 | 0 | 0.34 |