Name
Title | ||
|---|---|---|
Design of a soft-error tolerant 9-transistor/6-magnetic-tunnel-junction hybrid cell based nonvolatile TCAM |
Abstract | ||
|---|---|---|
This paper introduces a soft-error tolerant ternary content-addressable memory (TCAM) cell based on a transistor/magnetic-tunnel-junction (MTJ) hybrid structure. The MTJ device stores one-bit information as a resistance value and is often used for non-volatile memories. In the proposed nine-transistor (9T)/six-MTJ (6MTJ) cell, one-bit information is redundantly represented using three MTJs to mask a one-bit error per cell that might be occurred due to particle strikes. Thanks to the stackability of the MTJ device over a CMOS layer, there is no area overhead due to the redundancy compared to a conventional 9T-2MTJ cell. A 256-word 64-bit TCAM based on the proposed cell is designed under a 90 nm CMOS/MTJ process and is evaluated using HSPICE simulation. The simulation results show that the proposed TCAM properly operates under a one-bit error per cell with comparable energy, area and a 14% delay overhead compared to the conventional TCAM. Compared to a CMOS-based TCAM with an error-correction code that masks a one-bit error per word, the proposed TCAM reduces the number of transistors by 81% while masking a one-bit error per cell. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/NEWCAS.2014.6934016 | NEWCAS |
Keywords | Field | DocType |
cmos integrated circuits,spice,content-addressable storage,error correction codes,random-access storage,transistors,cmos layer,hspice simulation,mtj device,tcam,error-correction code,nonvolatile memories,soft-error tolerant ternary content-addressable memory cell,transistor-magnetic-tunnel-junction hybrid structure,computer architecture,error correction code,resistance | Content-addressable memory,Soft error,Masking (art),Computer science,Electronic engineering,CMOS,Redundancy (engineering),Tunnel magnetoresistance,Transistor | Conference |
ISSN | Citations | PageRank |
2472-467X | 1 | 0.38 |
References | Authors | |
4 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Onizawa, N. | 1 | 1 | 0.72 |
| Matsunaga, S. | 2 | 1 | 0.38 |
| Takahiro Hanyu | 3 | 441 | 78.58 |