Title
A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface
Abstract
The presented 1Tb 4b/cell 162 WL layer 3D Flash memory achieves an areal density of 15 Gb/mm2 which is 8.7% higher than prior work [1]. High-performance is the key enabler for 4b/cell NAND Flash to enter mainstream systems. This work delivers a 60MB/s programming throughput and a 65μs tR with an 8kB central WL stair architecture and contact-through-WL (CTW) region. 2.4Gb/s I/...
Year
DOI
Venue
2022
10.1109/ISSCC42614.2022.9731110
2022 IEEE International Solid- State Circuits Conference (ISSCC)
Keywords
DocType
Volume
Three-dimensional displays,System performance,Conferences,Discrete Fourier transforms,Stairs,Programming,Throughput
Conference
65
ISBN
Citations 
PageRank 
978-1-6654-2800-2
1
0.35
References 
Authors
0
49