Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities

Paper Info

Title
Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities

Abstract
We present a reliable magnetic tunnel junction (MTJ) TDDB model using 40Mb 22FDX® STT-MRAM at sub-PPM failure rate. This model is based on the precise estimation of voltage across MTJ at bit-cell level derived from compact model and design simulations to cover the product level endurance performance from MTJ diameter, resistance-area product, and temperature effects. We discuss the impl...

Year	DOI	Venue
2022	10.1109/IRPS48227.2022.9764563	2022 IEEE International Reliability Physics Symposium (IRPS)
Keywords	DocType	ISBN
Semiconductor device modeling,Estimation,Predictive models,Reliability engineering,Integrated circuit modeling,Integrated circuit reliability,Junctions	Conference	978-1-6654-7950-9
Citations	PageRank	References
0	0.34	0
Authors
29

Authors (29 rows)

Cited by (0 rows)

References (0 rows)

Name	Order	Citations	PageRank
V. B. Naik	1	0	0.34
J. H. Lim	2	0	0.34
K. Yamane	3	0	0.34
J. Kwon	4	0	0.34
Behin-Aein B.	5	0	0.34
N. L. Chung	6	0	0.34
S. K	7	0	0.34
L. Y. Hau	8	0	0.34
R. Chao	9	0	0.34
Swee Ching Tan	10	0	0.68
Chin-Yu Huang	11	934	61.04
L. Pu	12	0	0.34
Y. Otani	13	0	0.34
S.H. Jang	14	0	0.34
N. Balasankaran	15	0	0.34
W. P. Neo	16	0	0.34
T. Ling	17	0	0.34
J. W. Ting	18	0	0.34
H. Yoon	19	0	0.34
J. Mueller	20	0	0.34
B. Pfefferling	21	0	0.34
O. Kallensee	22	0	0.34
T. Merbeth	23	0	0.34
C.S. Seet	24	0	0.34
Ronald J Wong	25	0	0.68
Y. Shiyou	26	11	3.55
S. Soss	27	0	0.34
T. H. Chan	28	0	0.34
S. Y. Siah	29	0	0.34