Paper Info
Title
A low voltage current mirror based on quasi-floating gate MOSFETs
Abstract
A low voltage current mirror based on quasi-floating gate MOSFET (QFGMOS) is presented. The use of QFGMOS eliminates the limitations associated with floating-gate MOSFET (FGMOS) structures like increased silicon area, initial charge trapped in the floating gates and gain-bandwidth product degradation. The proposed current mirror based on QFGMOS has a current range up to 500 μA with offset of 10 pA, exhibits high bandwidth of 640 MHz, input resistance of 480 Ω, output resistance of 1.67 GΩ, unity current transfer ratio and dissipates 1.5 mW power. A resistive compensation has also been employed to increase the bandwidth up to 1.3 GHz.
Year
DOI
Venue
2010
10.1109/APCCAS.2010.5774857
Circuits and Systems
Keywords
Field
DocType
MOSFET,current mirrors,low-power electronics,gain-bandwidth product degradation,input resistance,low-voltage current mirror,output resistance,quasifloating gate MOSFET,resistive compensation,unity current transfer ratio,Current mirror,Quasi-floating gate MOSFET
Logic gate,Current mirror,Resistive touchscreen,Control theory,Computer science,Electronic engineering,Bandwidth (signal processing),Resistor,Low voltage,MOSFET,Electrical engineering,Low-power electronics
Conference
ISBN
Citations 
PageRank 
978-1-4244-7454-7
0
0.34
References 
Authors
2
3
Name
Order
Citations
PageRank
Rockey Gupta180.95
Susheel Sharma280.95
S. S. Jamuar313417.70