Name
Title | ||
|---|---|---|
Analysis of the area-delay performance of hybrid nanoelectronic memory cores used in field programmable gate arrays |
Abstract | ||
|---|---|---|
In this paper, an area-delay metric (AT) of hybrid memristive/CMOS memory architectures is discussed. The proposed memory circuit can be used as a lookup table in field programmable gate arrays (FPGAs) and is modeled by a passive nanoelectronic crossbar comprising resistive switches (RS) as memory elements. In particular, resistive switches which are based on the electrochemical metallization effect (ECM) are assumed. At the periphery, CMOS circuits are included with provide appropriate voltage levels for robust read and write operations. The optimization of the CMOS periphery was done for a 40-nm CMOS technology, and especially in regard to the physical properties of ECM cells which allows for the derivation of a realistic AT metric for the memory core circuit. For different architectural choices, the evaluation of the AT metric shows, that the area overhead which is caused by the peripheral CMOS circuits significantly determines the total circuit area. Under almost all conditions the required silicon area per bit is far beyond 4F2 (F: lithographic resolution), but for particular conditions the effective area per bit is smaller than the area per bit which is required for a corresponding SRAM core circuit. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1145/2483028.2483100 | ACM Great Lakes Symposium on VLSI |
Keywords | Field | DocType |
area-delay performance,peripheral cmos circuit,effective area,cmos memory architecture,cmos circuit,field programmable gate array,total circuit area,hybrid nanoelectronic memory core,area overhead,40-nm cmos technology,cmos periphery,required silicon area,resistive switch,nanoelectronics,scaling | Lookup table,Nanoelectronics,Computer science,Voltage,Field-programmable gate array,Electronic engineering,Static random-access memory,CMOS,Electronic circuit,Electrical engineering,Crossbar switch | Conference |
Citations | PageRank | References |
1 | 0.43 | 3 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Qin Wang | 1 | 1 | 0.43 |
| Arne Heittmann | 2 | 24 | 5.94 |
| Tobias G. Noll | 3 | 199 | 37.51 |