Name
Title | ||
|---|---|---|
Variability evaluation of feedback circuits used in nanoelectronic Memristive/CMOS circuits |
Abstract | ||
|---|---|---|
One significant challenge in the design of nanoelectronic circuits which comprise resistive switches (RS) beyond 10 nm feature size is to control the variability and the irreproducibility of RS device conductance. For RS, which are based on the electrochemical metallization effect (ECM), this variability is - amongst others - caused by random discrete electrochemical reactions during the filament growth. Based on a physical model for ECM cells a 1D Monte Carlo circuit simulation model was derived which models the occurrence of individual electrochemical reactions by a Poisson process. By circuit simulation it was possible to show that the conductance variation during the filament growth can be controlled by a regulating device, which establishes a negative feedback on the electrochemical reaction rate. In particular, for three different load types (current source, linear resistor, and source coupled NMOS transistor) the regulating properties in regard to variability reduction (and partly observed in experiments) were shown by Monte Carlo simulation. It was especially possible to show that the obtained conductance variation appears to be the consequence of the respective dynamic joint interaction between RS and the regulating device and is -in turn- not a predetermined property of the RS alone. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1145/2483028.2483078 | ACM Great Lakes Symposium on VLSI |
Keywords | Field | DocType |
monte carlo simulation,electrochemical reaction rate,random discrete electrochemical reaction,regulating device,feedback circuit,filament growth,electrochemical metallization effect,monte carlo circuit simulation,cmos circuit,nanoelectronic memristive,variability evaluation,individual electrochemical reaction,conductance variation,rs device conductance,scaling,nanoelectronics,variability | Nanoelectronics,Monte Carlo method,NMOS logic,Computer science,Current source,Negative feedback,CMOS,Electronic engineering,Resistor,Electronic circuit | Conference |
Citations | PageRank | References |
1 | 0.43 | 5 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Arne Heittmann | 1 | 24 | 5.94 |
| Tobias G. Noll | 2 | 199 | 37.51 |