Name
Title | ||
|---|---|---|
Limits of writing multivalued resistances in passive nanoelectronic crossbars used in neuromorphic circuits |
Abstract | ||
|---|---|---|
In this paper, limits of writing multivalued resistances in passive nanoelectronic crossbars are examined. The results are based on circuit simulation including device models for resistive switches based on the electrochemical metallization effect. The write operation is performed using a current mirror based on 40nm CMOS technology which operates in subthreshold mode. The results show that only sparsely coded pattern with low mutual overlap can be robustly brought into the matrix which limits the use of passive crossbar to applications that feature particular spatial distributions of resistive weights. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1145/2206781.2206836 | ACM Great Lakes Symposium on VLSI |
Keywords | Field | DocType |
neuromorphic circuit,device model,resistive weight,multivalued resistance,current mirror,electrochemical metallization effect,particular spatial distribution,passive nanoelectronic crossbar,passive crossbar,cmos technology,circuit simulation,nanoelectronics,sparse coding | Nanoelectronics,Current mirror,Computer science,Matrix (mathematics),Resistive touchscreen,Electronic engineering,CMOS,Subthreshold conduction,Neuromorphic circuits,Electrical engineering,Crossbar switch | Conference |
Citations | PageRank | References |
9 | 0.88 | 5 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Arne Heittmann | 1 | 24 | 5.94 |
| Tobias G. Noll | 2 | 199 | 37.51 |