Name
Title | ||
|---|---|---|
Modeling variability and irreproducibility of nanoelectronic resistive switches for circuit simulation |
Abstract | ||
|---|---|---|
This paper presents a device model for nanoelectronic resistive switches which are based on the electrochemical metallization effect (ECM). The focus is set on modeling variability as well as irreproducibility which are essential properties of scaled nanoelectronic devices. In particular, a Poisson-based random ion deposition model and a non-linear filament surface effect are described. The model is especially useful for circuit simulation and can be implemented on standard circuit simulation platforms such as Spice or Spectre using inbuilt standard elements. Based on this model, effects of variability were examined by Monte Carlo simulation for a particular hybrid CMOS/nanoelectronic circuit. The results show that the proposed model is able to cover significant scaling effects, which is necessary for prospective design space exploration and circuit optimization. |
Year | DOI | Venue |
|---|---|---|
2013 | 10.1109/ASPDAC.2013.6509646 | Design Automation Conference |
Keywords | Field | DocType |
CMOS integrated circuits,Monte Carlo methods,SPICE,circuit simulation,nanoelectronics,semiconductor device metallisation,semiconductor device models,stochastic processes,switches,ECM,Monte Carlo simulation,Poisson-based random ion deposition model,SPECTRE,SPICE,circuit optimization,design space exploration,device model,electrochemical metallization effect,hybrid CMOS/nanoelectronic circuit,inbuilt standard elements,modeling irreproducibility,modeling variability,nanoelectronic resistive switches,nonlinear filament surface effect,scaled nanoelectronic devices,scaling effects,standard circuit simulation platforms | Nanoelectronics,Monte Carlo method,Computer science,Spice,Resistive touchscreen,Stochastic process,Electronic engineering,CMOS,Electrical engineering,Design space exploration,Scaling | Conference |
ISSN | ISBN | Citations |
2153-6961 | 978-1-4673-3029-9 | 1 |
PageRank | References | Authors |
0.45 | 6 | 2 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Arne Heittmann | 1 | 24 | 5.94 |
| Tobias G. Noll | 2 | 199 | 37.51 |